收藏本站

Si4636DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.0085 at V GS = 10 V
0.0105 at V GS = 4.5 V
I D (A) a
17
15.6
Q g (Typ.)
18.8 nC
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? 100 % R g and UIS Tested
SCHOTTKY AND BODY DIODE PRODUCT
SUMMARY
APPLICATIONS
V DS (V)
30
V SD (V)
0.4 at 2 A
I S (A)
5 a
? Notebook Logic DC/DC
- Low Side
SO-8
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
D
G
Top V ie w
N -Channel MOSFET
Orderin g Information: Si4636DY-T1-E3 (Lead (P b )-free)
Si4636DY -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
Schottky Diode
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 16
17.0
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
13.5
12.7 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
10.2 b, c
60
5.0
2.3 b, c
20
20
A
mJ
T C = 25 °C
4.4
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
2.8
2.5 b, c
W
T A = 70 °C
1.6 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Max.
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
40
23
50
28
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
Document Number: 74961
S09-0394-Rev. C, 09-Mar-09
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI4638DY-T1-E3 MOSFET N-CH/SCHOTTKY 30V 8SOIC
SI4646DY-T1-GE3 MOSFET N-CH/SCHOTTKY 30V 8SOIC
SI4654DY-T1-E3 MOSFET N-CH D-S 25V 8-SOIC
SI4705-D-EVB BOARD EVAL MOBILE SI4704/05-D50
SI4706-B20-GM IC FM RADIO TUNER 20-QFN
SI4712DY-T1-GE3 MOSFET N-CH/SCHOTTKY 30V 8SOIC
SI4731-D50-EVB BOARD EVAL SI4730/SI4731-D50
SI4731-D50-GM IC RADIO RECEIVER AM/FM 20-QFN
相关代理商/技术参数
SI4636DY-T1-GE3 功能描述:MOSFET 30V 17A 4.4W 8.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4638DY-T1-E3 功能描述:MOSFET 30V 22.4A 5.9W 6.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4638DY-T1-GE3 功能描述:MOSFET 30V 22.4A 5.9W 6.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4642DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4642DY-T1-E3 功能描述:MOSFET 30V 34A 7.8W 3.75mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4642DY-T1-GE3 功能描述:MOSFET 30V 34A 7.8W 3.75mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4646DY-T1-E3 功能描述:MOSFET 30V 12A 6.25W 11.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4646DY-T1-GE3 功能描述:MOSFET 30V 12A 6.25W 11.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube